Search results for "Electrical breakdown"
showing 9 items of 9 documents
Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors
2019
GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.
Properties of native ultrathin aluminium oxide tunnel barriers
2003
We have investigated planar metal–insulator–metal tunnel junctions with aluminium oxide as the dielectricum. These oxide barriers were grown on an aluminium electrode in pure oxygen at room temperature till saturation. By applying the Simmons model we derived discrete widths of the tunnelling barrier, separated by Δs ≈ 0.38 nm. This corresponds to the addition of single layers of oxygen atoms. The minimum thickness of s0 ≈ 0.54 nm is then due to a double layer of oxygen. We found a strong and systematic dependence of the barrier height on the barrier thickness. Breakdown fields up to 5 GV m−1 were reached. They decreased strongly with increasing barrier thickness. Electrical breakdown could…
SOIL IONIZATION DUE TO HIGH PULSE TRANSIENT CURRENTS LEAKED BY EARTH ELECTRODES
2009
This paper proposes a numerical model of the soil ionization phenomena that can occur when earth electrodes are injected by high pulse transient currents, as the one associated with a direct lightning stroke. Based on finite difference time domain numerical scheme, this model ascribes the electrical breakdown in the soil to the process of discharge in the air. In fact, as soon as the local electric field overcomes the electrical strength, the air in the voids trapped among soil particles is ionized, and the current is conducted by ionized plasma paths locally grown. The dimension of these ionized air channels is strictly dependent upon the local temperature. Thus, a local heat balance is en…
Electric breakdown of dielectric thin films for high-voltage display applications
2016
Smectic A liquid crystal is one of the most promising material for smart glass application due to infinite bistability and low haze at clear state. Voltage is needed to switch from scattering to transparent and it is likely for dielectric breakdown to occur. In order to reduce the probability of dielectric breakdown to occur, a dielectric insulating coating is usually employed. In this work we have compared electrical and optical properties of SiO2 thin films with thickness up to 500 nm coated by flexographic printing and reactive magnetron sputtering. IV characteristics and dielectric breakdown values show sputtered coatings to have higher dielectric strength. For sputtered coatings with t…
A novel flexible approach for prediction and on line diagnostic of partial discharge
2004
Partial discharges (PD), due to unavoidable local defects produced by the industrial manufacturing process, can determine local erosion of the material that may cause the electrical breakdown of the component in which the dielectric material represents the fundamental part. Recently, improved diagnostics of electrical insulation systems by means of electric PD measurements through a stochastic processing of the acquired data have been carried out. In this way, the identification of the defects as well, as the separation of multiple defects simultaneously active, have been performed. In this paper, a novel flexible approach for the on-line characterization of the defects in a dielectric mate…
Vacuum electrical breakdown conditioning study in a parallel plate electrode pulsed dc system
2019
Conditioning of a metal structure in a high-voltage system is the progressive development of resistance to vacuum arcing over the operational life of the system. This is, for instance, seen during the initial operation of radio frequency (rf) cavities in particle accelerators. It is a relevant topic for any technology where breakdown limits performance and where conditioning continues for a significant duration of system run time. Projected future linear accelerators require structures with accelerating gradients of up to 100 MV/m. Currently, this performance level is achievable only after a multimonth conditioning period. In this work, a pulsed dc system applying voltage pulses over paral…
ChemInform Abstract: Electrical and Mechanical Breakdown of Anodic Films on Tungsten in Aqueous Electrolytes.
1988
Abstract Different types of breakdown are reported to occur during the galvanostatic growth of WO3 films in different aqueous electrolytes. Stresses inside the growing film cause the occurrence of cracks at a critical thickness which varies with the anodizing solution. The electrical breakdown is caused by avalanche ionization of the electronic current inside the film. The influence of the different experimental parameters on both the mechanical and the electrical breakdown voltages is discussed. For the electrical breakdown a model is proposed which explains the dependence of the sparking voltage on the electrolyte resistivity by assuming a double layer effect on the oxygen evolution react…
Poling dynamics of an EO active material using parallel-plate electrodes
2017
We describe the sample preparation and experimental setup for second harmonic generation measurement of electro-optical (EO) chromophore/polymer system at the time of contact-poling. Different types of spacers for avoiding electric breakdown due to avalanche multiplication are compared. Electric field threshold values for second harmonic generation are observed in all samples.
ChemInform Abstract: Electrical Breakdown and Pitting in Anodic Films on Tungsten in Halogen Ion-Containing Solutions.
1988
Abstract The systematic investigation of the anodic behaviour of W in halogen ion-containing solutions reveals noticeable differences in the presence of different anions. Strong generalized dissolution is observed in fluoride solutions, the oxide growth being hindered at low anodizing current densities. Sparking phenomena occur in the presence of Br− and I− anions as in nitrate and sulphate solutions. Only in Cl− containing solutions is the growth of the anodic films limited by the occurrence of pitting phenomena at a critical thickness of the oxide. The laws of dependence of the phenomenon on the experimental parameters and the influence of ferrous ions on the voltage at which pitting occu…